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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMDF1N05E/D
Medium Power Surface Mount Products
TMOS Dual N-Channel Field Effect Transistors
MMDF1N05E
DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM
MiniMOSTM devices are an advanced series of power MOSFETs which utilize Motorola's TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. * * * * * * * *
(R)
D
G S CASE 751-05, Style 11 SO-8
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive -- Can Be Driven by Logic ICs Miniature SO-8 Surface Mount Package -- Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed Avalanche Energy Specified Mounting Information for SO-8 Package Provided IDSS Specified at Elevated Temperature
Source-1 Gate-1 Source-2 Gate-2
1 2 3 4
8 7 6 5
Drain-1 Drain-1 Drain-2 Drain-2
Top View
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage -- Continuous Drain Current -- Continuous Drain Current -- Pulsed Single Pulse Drain-to-Source Avalanche Energy -- Starting TJ = 25C (VDD = 25 V, VGS = 10 V, IL = 2 Apk) Operating and Storage Temperature Range Total Power Dissipation @ TA = 25C Thermal Resistance - Junction to Ambient (1) Maximum Temperature for Soldering, Time in Solder Bath Symbol VDS VGS ID IDM EAS TJ, Tstg PD RJA TL Value 50 20 2.0 10 300 - 55 to 150 2.0 62.5 260 10 Unit Volts Volts Amps mJ C Watts C/W C Sec
DEVICE MARKING
F1N05 (1) Mounted on 2" square FR4 board (1" sq. 2 oz. Cu 0.06" thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device MMDF1N05ER2 Reel Size 13 Tape Width 12 mm embossed tape Quantity 2500
MiniMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company
REV 5
(c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996
1
MMDF1N05E
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0, ID = 250 A) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.5 Adc) (VGS = 4.5 Vdc, ID = 0.6 Adc) Forward Transconductance (VDS = 15 V, ID = 1.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE CHARACTERISTICS (TC = 25C) Forward Voltage(1) (IS = 1.5 A, VGS = 0 V) (dIS/dt = 100 A/s) Reverse Recovery Time (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (2) Switching characteristics are independent of operating junction temperature. (VDS = 10 V, ID = 1.5 A, VGS = 10 V) (VDD = 10 V, ID = 1.5 A, RL = 10 , VG = 10 V, RG = 50 ) td(on) tr td(off) tf Qg Qgs Qgd -- -- -- -- -- -- -- -- -- -- -- 12.5 1.9 3.0 20 30 40 25 -- -- -- nC ns (VDS = 25 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss -- -- -- 330 160 50 -- -- -- pF VGS(th) 1.0 -- 3.0 Vdc Ohms RDS(on) RDS(on) gFS -- -- -- -- -- 1.5 0.30 0.50 -- mhos V(BR)DSS IDSS IGSS 50 -- -- -- -- -- -- 250 100 Vdc Adc nAdc Symbol Min Typ Max Unit
VSD trr
-- --
-- 45
1.6 --
V ns
2
Motorola TMOS Power MOSFET Transistor Device Data
MMDF1N05E
TYPICAL ELECTRICAL CHARACTERISTICS
10 10 V I D , DRAIN CURRENT (AMPS) 8 4.5 V 6 4V 4 VGS = 3.5 V 6V 8V TJ = 25C 10 5V I D , DRAIN CURRENT (AMPS) 8 VDS 10 V - 55C 25C 100C
6
4
25C
2 0
2 100C - 55C 3 4 5 6 7 8
0
4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
2
10
0
0
1
2
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on) , DRAIN-TO-SOURCE ON-RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE ON-RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 - 50 - 25
Figure 2. Transfer Characteristics
0.5 VGS = 10 V 0.4
VGS = 10 V ID = 1.5 A
0.3
0.2
100C 25C
0.1 - 55C 0 0 2 4 6 ID, DRAIN CURRENT (AMPS) 8
25 75 0 50 100 TJ, JUNCTION TEMPERATURE (C)
125
150
Figure 3. On-Resistance versus Drain Current
V GS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 4. On-Resistance Variation with Temperature
0.5 ID = 1.5 A VGS = 0
1.2 VDS = VGS ID = 1 mA
0.4
1.1
0.3
1
0.2
0.9
0.1
0.8
0
2
3
4
5 6 7 8 TJ, JUNCTION TEMPERATURE
9
10
0.7 - 50
- 25
0 25 50 75 100 TJ, JUNCTION TEMPERATURE (C)
125
150
Figure 5. On Resistance versus Gate-To-Source Voltage
Figure 6. Gate Threshold Voltage Variation with Temperature
Motorola TMOS Power MOSFET Transistor Device Data
3
MMDF1N05E
1200 1000 C, CAPACITANCE (pF) 800 VDS = 0 600 400 200 0 Ciss Coss Crss 20 10 0 20 25 15 5 5 10 15 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = 0 VGS Ciss Crss TJ = 25C 0 VDS VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) 12 10 8 6 4 2 0 VDS = 25 V ID = 1.2 A
0
2
4
6 10 8 12 Qg, TOTAL GATE CHARGE (nC)
14
16
Figure 7. Capacitance Variation
Figure 8. Gate Charge versus Gate-To-Source Voltage
100 I D , DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25C
Mounted on 2" sq. FR4 board (1" sq. 2 oz. Cu 0.06" thick single sided) with one die operating, 10s max.
SAFE OPERATING AREA INFORMATION
Forward Biased Safe Operating Area The FBSOA curves define the maximum drain-to-source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include the limitations of simultaneous high voltage and high current, up to the rating of the device, they are especially useful to designers of linear systems. The curves are based on a case temperature of 25C and a maximum junction temperature of 150C. Limitations for repetitive pulses at various case temperatures can be determined by using the thermal response curves. Motorola Application Note, AN569, "Transient Thermal Resistance -- General Data and Its Use" provides detailed instructions.
10
100 s 10 ms 1 dc
10 s
0.1
RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 100
0.01 0.1
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 9. Maximum Rated Forward Biased Safe Operating Area
10 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2 0.1 0.05 0.02 0.01
0.1
Normalized to ja at 10s.
Chip
0.0175 0.0710 0.2706 0.5776 0.7086
0.01 SINGLE PULSE 0.001 1.0E-05 1.0E-04 1.0E-03 1.0E-02
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
Ambient 1.0E+03
1.0E-01 t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
Figure 10. Thermal Response
4
Motorola TMOS Power MOSFET Transistor Device Data
MMDF1N05E
INFORMATION FOR USING THE SO-8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self-align when subjected to a solder reflow process.
0.060 1.52
0.275 7.0
0.155 4.0
0.024 0.6
0.050 1.270
inches mm
SO-8 POWER DISSIPATION
The power dissipation of the SO-8 is a function of the input pad size. These can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SO-8 package, PD can be calculated as follows: PD = TJ(max) - TA RJA the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 2.0 Watts. 150C - 25C 62.5C/W
PD =
= 2.0 Watts
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into
The 62.5C/W for the SO-8 package assumes the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 2.0 Watts using the footprint shown. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using board material such as Thermal Clad, the power dissipation can be doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C.
* The soldering temperature and time shall not exceed * When shifting from preheating to soldering, the maximum * After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. temperature gradient shall be 5C or less. 260C for more than 10 seconds.
Motorola TMOS Power MOSFET Transistor Device Data
5
MMDF1N05E
PACKAGE DIMENSIONS
-A- B
M 8 5 X 45 _
J
1 4
4X
-B-
M_ G F
NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50
P
0.25 (0.010)
M
-T-
8X
C
SEATING PLANE
D 0.25 (0.010)
M
K
TB
S
A
S
R
CASE 751-05 SO-8 ISSUE P
STYLE 11: PIN 1. 2. 3. 4. 5. 6. 7. 8.
SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
6
Motorola TMOS Power MOSFET TransistorMMDF1N05E/D Device Data
*MMDF1N05E/D*

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